B0520WS SD

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 B0520WS/B0530WS/B0540WS SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: B0520WS: SD B0530WS: SE B0540WS: SF Maximum Ratings @Ta=25℃ Parameter Symbol Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM B0520WS B0530WS B0540WS 20 30 40 Unit V VR DC blocking voltage RMS reverse voltage reverse voltage (DC) VR(RMS) 14 21 28 V Io 0.5 A Forward current surge peak IFSM 5.5 A Power dissipation PD 200 mW Thermal resistance junction to ambient RθJA 500 ℃/W ℃ Average rectified output current Junction temperature Tj 125 Storage temperature TSTG -55~+150 ℃ Voltage rate of change dv/dt 1000 V/μs Electrical Characteristics @Ta=25℃ Parameter Minimum reverse breakdown voltage Forward voltage Reverse current Reverse current Capacitance between terminals Symbol V(BR) B0520WS B0530WS B0540WS 20 -- -- -- 30 -- -- -- 40 VF1 0.33 0.36 -- VF2 0.39 0.45 0.510 VF3 -- -- 0.62 IR1 75 -- -- IR2 -- 80 -- IR3 250 100 10 IR4 -- 500 -- IR5 -- -- 20 CT 170 170 170 Unit Conditions IR=250μA V IR=500μA IR=20μA IF=0.1A V IF=0.5A IF=1A μA VR=10V VR=15V VR=20V μA VR=30V VR=40V pF VR=0,f=1MHz C,Apr,2013 B0540WS Typical Characteristics Forward Reverse Characteristics Characteristics 3000 1000 1000 ℃ Ta 5℃ =2 Ta REVERSE CURRENT IR FORWARD CURRENT IF 00 =1 (uA) (mA) Ta=100 ℃ 100 10 1 100 10 Ta=25 ℃ 1 0.1 0.1 0 200 400 FORWARD VOLTAGE 600 VF 800 0 10 (mV) 20 30 REVERSE VOLTAGE VR 40 (V) Power Derating Curve Capacitance Characteristics 120 300 f=1MHz PD (mW) 100 80 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 60 40 200 100 20 0 0 0 5 10 15 REVERSE VOLTAGE 20 VR 25 (V) 30 0 25 50 AMBIENT TEMPERATURE 75 100 Ta 125 (℃ ) C,Apr,2013